Source absolute maximum ratings ta 25c item symbol ratings unit drain to source voltage vdss 300 v gate to. Spp11n60c3 spi11n60c3, spa11n60c3 cool mos power transistor. Unit reference section reference output voltage vref tj 25c, iref 1ma 5. The ibm system storage san48b5 switch is designed to meet the demands of hyperscale private or hybrid cloud storage environments by delivering 16 gbps fibre channel. A, october 20032003 fairchild semiconductor corporation0. Fairchild, alldatasheet, datasheet, datasheet search site for electronic components and. Fairchild 500v nchannel mosfet,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Best value n50 great deals on n50 from global n50 sellers. The content and s of the attached material are the property of its owner. Electrical characteristics tamb 25 oc unless otherwise specified symbol parameter test conditions min.
The device adopts planar stripe and uses dmos technology to minimize and provide. Lm386 low voltage audio power amplifier datasheet rev. Absolute maximum ratings are stress ratings only and functional device operation is not implied. After i got your message, i looked at some old jfets such as the j, and, lo and behold, the resistance does change with gate voltage. As per the law relating to information storage and personal integrity, you have carotdie right to oppose art 26 of that lawaccess art 34 of that law and rectify art 36 of that law your.
Inverse diode continuous forward current is tc25c 11 a inverse diode direct current, pulsed ism 33 inverse diode forward voltage vsd vgs0v, ifis 1 1. Video album songs mp4 free download nov 1, datasheet contains the design specifications for product development. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Absolute maximum ratings are those values beyond which the device could be permanently damaged. S 25absolute maximum ratings t c, unless otherwise specified parameter symbol ratings unit drainsource voltage v dss 500 v gatesource voltage v gss 30 v drain current continuous i d 18 a pulsed note 2 i dm 72 a avalanche current note 2 i ar a. J datasheet, j pdf, j data sheet, j manual, j pdf, j, datenblatt, electronics j, alldatasheet, dwtasheet, datasheet, datasheets, data sheet, datas. External disk storage expansion units can also be attached for up to a total of 60 spindles. Storage temperature, tstg 65 150 c 1 jedec document jep155 states that 500v hbm allows safe manufacturing with a standard esd control process. S ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 18n50lta3t 18n50gta3t to220 g d s tube 18n50ltf1t 18n50gtf1t to220f1 g d s tube 18n50ltf2t 18n50gtf2t to220f2 g d s tube. Thermal characteristics characteristic symbol max unit.
The ibm system storage san48b5 switch is designed to meet the demands. The datasheet is printed for reference information only. Sep 18, 2019 16n50c3 datasheet vds 560v, mos transistor infineon, spp16n50c3 datasheet, 16n50c3 pdf, 16n50c3 pinout, 16n50c3 equivalent, data, circuit, schematic. Spp12n50c3 spi12n50c3, spa12n50c3 cool mos power transistor. On semiconductor n50c mosfet are available at mouser electronics. Storage temperature range t stg55150 c limited by maximum junction temperature characteristic symbol typ. Maximum drain currentvs case temperature10050050 datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Mar 18, 2019 j datasheet, j pdf, j data sheet, j manual, j pdf, j, datenblatt, electronics j, alldatasheet, dwtasheet, datasheet, datasheets, data sheet, datas. Recent listings manufacturer directory get instant insight into any electronic component.
Fqpfn50c datasheetpdf 1 page fairchild semiconductor. Y2010dn datasheet pdf, y2010dn datasheet, y2010dn pdf, y2010dn pinout, y2010dn data, circuit, ic, manual, substitute, parts, schematic, reference. This is one package pinout of n50,if you need more pinouts please download n50s pdf datasheet. If the checkbox is invisible, the corresponding document cannot be downloaded in batch. This datasheet is subject to change without notice. Spp11n60c3 spi11n60c3, spa11n60c3, spa11n60c3 e8185 electrical characteristics parameter symbol conditions values unit min. It is a 2u, highdensity system containing up to twelve internal disk drives. Datasheet contains the design specifications for product development. Pulse width limited by maximum junction temperature 3. C reliability characteristics symbol parameter test method min typ max units v zap 2 esd susceptibility milstd883, test method 3015 2000 v i lth 2 3 latchup jedec standard 17 100 ma t dr data retention milstd883, test method 1008 100 years. Operating and storage junction temperature range tj, tstg.
Oct 01, 2015 y2010dn datasheet pdf, y2010dn datasheet, y2010dn pdf, y2010dn pinout, y2010dn data, circuit, ic, manual, substitute, parts, schematic, reference. When mounted on the minium pad size recommended pcb mount. By continuing to use this site, you consent to the use of cookies. H5n3011p silicon n channel mos fet high speed power switching rej03g03850200 rev. A, october 20032003 fairchild semiconductor corporationpackage dimensions continuedfigure 9. Maximum lead temperature for soldering purposes, 18 from case for 5 seconds. Any increase in vdss, id or decrease in rds on will result in an increase of qg. Spp11n60c3 spi11n60c3, spa11n60c3, spa11n60c3 e8185 forward characteristics of body diode if f vsd parameter. Sep 26, 2019 n50c datasheet pdf on semiconductor n50c mosfet are available at mouser electronics. Rohs irfn50 series rohs semiconductor nell high power products nchannel power mosfet 14a, 500volts description the nell irfn50 are nchannel enhancement mode d silicon gate power field effect transistors. Fqpfn50c datasheethtml 1 page fairchild semiconductor. Offer en29lv160cb70tip eon from kynix semiconductor hong kong limited.
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